Electrical manipulation of spin states in a single electrostatically gated transition-metal complex.

Vacancy Defects Induced Magnetism in Armchair Graphdiyne Nanoribbon

Spin-polarized electronic and transport properties of Armchair GraphdiyneNanoribbons (A-GDYNR) with single vacancy (SV), two types of configurations fordouble vacancy (DV1, DV2) and multi vacancy (MV) defects are studied by nonequilibriumGreen’s function (NEGF) combined with density functional theory (DFT).The results demonstrate that the A-GDYNR with the SV has the lowe...

University of Groningen Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a n...

Gate-controlled electron spin resonance in GaAsÕAlxGa1ÀxAs heterostructures

The electron spin resonance ~ESR! of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of th...

Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers.

In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, v...